HiPerFET TM
IXFH 80N085
V DSS
= 85 V
I D25
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
IXFT 80N085
= 80 A
R DS(on) = 9 m W
t rr £ 200 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
Continuous
85
85
± 20
V
V
V
V GSM
I D25
I L(RMS)
I DM
I AR
E AR
Transient
T C = 25 ° C
Lead current limit
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 30
80
75
320
80
50
V
A
A
A
A
mJ
(TAB)
TO-268 (IXFT) Case Style
E AS
dv/dt
I S £ I DM , di/dt £ 100 A/ m s, V DD £ V DSS ,
T J £ 150 ° C, R G = 2 W
2.5
5
J
V/ns
G
S
(TAB)
P D
T J
T JM
T stg
T L
M d
Weight
T C = 25 ° C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
300
-55 to +150
150
-55 to +150
300
1.13/10
6
4
W
° C
° C
° C
° C
Nm/lb.in.
g
g
G = Gate D = Drain
S = Source TAB = Drain
Features
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? International standard packages
? Low R DS (on)
? Rated for unclamped Inductive load
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
85
2.0
T J = 25 ° C
T J = 125 ° C
4.0
± 100
50
1
V
V
nA
m A
mA
switching (UIS)
? Molding epoxies meet UL 94 V-0
flammability classification
Advantages
? Easy to mount
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t £ 300 m s, duty cycle d £ 2 %
9
m W
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98709 (03/24/00)
1-2
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